Part Number Hot Search : 
RN2357 1N4148 74AHCT1 FC101 A5800 157M0 7FLITE39 TA124
Product Description
Full Text Search
 

To Download TSM230N06CIC0G Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  tsm 23 0n 06 6 0 v n - channel power mosfet 1 / 8 version: c 14 to - 220 ito - 220 key parameter performance parameter value unit v ds 60 v r ds(on) (max) v gs = 10v 2 3 m v gs = 4 .5v 28 q g 28 nc to - 252 (dpak) features 100% avalanche tested fast switching block diagram n - channel mosfet ordering information part no. package packing tsm 23 0n 06 c z c 0g to - 2 20 50 pcs / tube tsm 23 0n 06 c i c0g i to - 2 20 50 pcs / tube tsm 23 0n 06 c p rog to - 252 2.5kpcs / 13 reel note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds absolute maximum rating s ( t c = 25 c unless otherwise noted ) parameter symbol limit unit to - 220 ito - 220 dpak drain - source voltage v ds 6 0 v gate - source voltage v gs 2 0 v continuous drain current (note 1) t c = 25 c i d 50 * a t c = 100 c 3 2 * a pulsed drain current (note 2 ) i dm 200 a si ngle pulse avalanche energy (note 3 ) e as 42 mj power dissipation @ t c = 25 c p d 104 42 53 w operating junction temperature t j 150 c storage temperature range t stg - 55 to +150 c pin definition : 1. gate 2. drain 3. source
tsm 23 0n 06 6 0 v n - channel power mosfet 2 / 8 version: c 14 thermal performance parameter symbol limit unit to - 220 ito - 220 dpak thermal resistance - junction to case r  jc 1.2 3 2 c /w thermal resistance - junction to ambient r  ja 62 62 62 electrical specifications ( t c = 25 c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown volt age v gs = 0 v, i d = 250 a bv dss 6 0 -- -- v drain - source on - state resistance v gs = 10v, i d = 20a r ds(on) -- 20 23 m ? v gs = 4.5v, i d = 12a -- 23 28 gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 1.2 1.8 2. 5 v zero gate voltage drain current v ds = 60v, v gs = 0v i dss -- -- 1 a v ds = 48v, t j = 125 c -- -- 10 gate body leakage v gs = 2 0v, v ds = 0v i gss -- -- 100 n a forward transconductance (note 4 ) v ds = 1 0v, i d = 10 a g fs -- 9 -- s dynamic total gate charge (note 4 , 5 ) v ds = 3 0v, i d = 15 a, v g s = 10v q g -- 28 -- nc gate - source charge (note 4 , 5 ) q gs -- 3.5 -- gate - drain charge (note 4 , 5 ) q gd -- 6.5 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 1680 -- pf output capacitance c oss -- 115 -- reverse transfer capacitance c rss -- 85 -- switching turn - on delay time (note 4 , 5 ) ) v dd = 30 v, i d = 1 a, v gs = 10v, r g = 6 ? t d(on) -- 7.2 -- ns turn - on rise time (note 4 , 5 ) ) t r -- 38 -- turn - off delay time (note 4 , 5 ) t d(off) -- 3 4 -- turn - off fall time (note 4 , 5 ) t f -- 8.2 -- source - drain diode ratings and characteristic maximum continuous drain - source diode forwar d current integral reverse diode in the mosfet i s -- -- 50 a maximum pulse drain - source diode forward current i s m -- -- 200 a diode - source forward voltage v gs = 0v , i s = 1 a v sd -- -- 1 v reverse recovery time (note 4 ) v gs = 0v , i s = 1 a di f /dt = 100a/s t rr -- 19.6 -- ns reverse recovery charge (note 4 ) q rr -- 14.2 -- n c note : 1. limited by maximum junction temperature 2. pulse width limited by safe operating area 3. l = 0.1 mh, i as = 29 a, v dd = 2 5v, r g = 25 ? , starting t j = 25 c 4. p ulse test: pulse width "d 300 s , duty cycle "d 2% 5. switching time is essentially independent of operating temperature.
tsm 23 0n 06 6 0 v n - channel power mosfet 3 / 8 version: c 14 electrical characteristics curve continuous drain current vs. t c rdson vs. continuous drain current capaci tance gate charge on - resistance vs. junction temperature threshold voltage vs. junction temperature i d , continuous drain current ( a ) t c , case temperature ( c ) r dson , on resistance ( m w ) i d , continuo us drain current ( a ) c, capacitance (pf) v ds , drain to source voltage (v ) v gs , gate to source voltage ( v ) qg , gate charge (nc) normalized on resistance ( m w ) t j , junction temperature ( c ) t j , junction temper ature ( c ) normalized gate threshold voltage ( v )
tsm 23 0n 06 6 0 v n - channel power mosfet 4 / 8 version: c 14 electrical characteristics curve maximum safe operating area (to - 220) normalized thermal transient impedance (to - 220) maximum safe operating area (ito - 220 ) normalized thermal transient impedance (ito - 220) maximum safe operating area (to - 252) normalized thermal transient impedance (to - 252) i d , continuous drain current ( a ) normalized thermal response ( r ? jc ) square wave pulse duration (s) v ds , drain to source voltage (v ) normalized thermal response ( r ? jc ) normalized thermal response ( r ? jc ) square wave pulse duration (s) squa re wave pulse duration (s) i d , continuous drain current ( a ) i d , continuous drain current ( a ) v ds , drain to source voltage (v ) v ds , drain to source voltage (v )
tsm 23 0n 06 6 0 v n - channel power mosfet 5 / 8 version: c 14 to - 220 mechanical drawing unit: millimeters marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code
tsm 23 0n 06 6 0 v n - channel power mosfet 6 / 8 version: c 14 ito - 220 mechanical drawing unit: millimeters marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code
tsm 23 0n 06 6 0 v n - channel power mosfet 7 / 8 version: c 14 to - 252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 23 0n 06 6 0 v n - channel power mosfet 8 / 8 version: c 14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information cont ained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc  s terms and conditions of sale for such products, tsc assumes no liab ility whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully in demnify tsc for any damages resulting from such improper use or sale.


▲Up To Search▲   

 
Price & Availability of TSM230N06CIC0G

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X